Re: BIG solid state devices...

["Tesla list" <tesla-at-pupman-dot-com>]

Original poster: "Jim Lux by way of Terry Fritz <twftesla-at-qwest-dot-net>" <jimlux-at-earthlink-dot-net>

Of course, if the experiences my coworkers have had with 1000V FETs are any
guide, you'd want to see some real live test data at the high voltages.

For the IGBTs, switching time might also result in significant power loss..
Rise and fall times at 500-1000 Amps look like a few microseconds.  The data
sheet shows 1-2 Joule per pulse loss for 500-1000 Amps collector current.
At 100 kHz switching rate, thats 100-200 kW in the switching losses...



----- Original Message -----
From: "Tesla list" <tesla-at-pupman-dot-com>
To: <tesla-at-pupman-dot-com>
Sent: Friday, July 12, 2002 6:41 PM
Subject: BIG solid state devices...


> Original poster: "Terry Fritz" <twftesla-at-qwest-dot-net>
>
> Hi,
>
> I note the Hitachi MBN1200D33C
>
> http://www.hitachi.co.jp/Div/ise/pdevice/igbt/index-e.htm
>
> http://www.hitachi.co.jp/Div/ise/pdevice/igbt/d-igbt/1200d33c.pdf
>
> switches 3300 volts at 1500 amps with 6 volts of CE drop...  If one were
to
> put 8 in series to run a 21kV firing voltage, you would get about 48 volts
> drop or 48 x 21000 = 1008000 watts (i) of instantaneous power loss.  But
> the system power is 1500 x 21000 = 31500000 watts (i)
> >
>