Yeah, I definitely noticed the price tag. But comparing that to the
CMM300 half bridge, it is on par with the price and it is all integrated
into one package which I would think would help reduce parasicitcs. I guess
this begs the question: what is the advantage of doing a half bridge versus
a full bridge? I would assume that it would be higher power but I am still
learning power electronics (I'm an RF engineer).
I was also thinking that this part would kind of be one to grow
into...basically I could start by running it way backed off (lower voltage
and current) and reduce the chance of destroying it. That way I could learn
with reduced risk of a costly mistake. Then once I am comfortable I can
upgrade the power supply around it. Are these sound strategies to use or do
IGBTs like to be driven more toward their limits? Thanks for the response
and insight!
Jeremy
On Monday, July 7, 2014, Steve Ward <steve.ward@xxxxxxxxx> wrote:
> Jeremy,
>
> The APTGLQ200H120G part looks outstanding, and the price tag matches that.
>
> Assuming you use a good driver that switches the IGBTs right near the zero
> crossing in primary current, they should be capable of driving a fairly
> large tesla coil. Id suggest operating within the 770A spec on the parts,
> but at 600V thats quite powerful. Provided they have good cooling, one of
> these parts could probably drive a 5-10kW coil.
>
> There really isnt an "Fmax" for a part, its a continuous curve of
> "operating current vs frequency". Id suggest running at <100khz if you
> really want to push the peak current level to the max, but they would still
> work fine at less peak current and a higher frequency.
>
> Steve
>
>
> On Sun, Jul 6, 2014 at 9:52 AM, Jeremy Gassmann <jeremyee78@xxxxxxxxx
> <javascript:;>>
> wrote:
>
> > Hello everyone. I am starting my journey on the DRSSTC road and have some
> > questions regarding the heart of the system...the IGBT. There are a lot
> of
> > options out there including half bridge packages and even full bridge
> > packages. Looking at the data sheets shows a lot of characteristics such
> as
> > input and output capacitance, rise and fall times, and switching energy.
> My
> > question is: what are the most important factors to look at when
> selecting
> > a device? Obviously current and voltage ratings are very important but
> what
> > about keeping capacitance as low as possible, etc? Are there any good
> > documents out there the correlate these parameters to an fmax of the
> > device?
> >
> > I did find a device that looks like it would be a good candidate: the
> > Microsemi APTGLQ200H120G. It is a full bridge power module. Anyone work
> > with this device or know if there any reasons not to use it? Thank you
> all
> > very much for the help!
> >
> > Jeremy
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> >
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