Hello everyone. I am starting my journey on the DRSSTC road and have some
questions regarding the heart of the system...the IGBT. There are a lot of
options out there including half bridge packages and even full bridge
packages. Looking at the data sheets shows a lot of characteristics such as
input and output capacitance, rise and fall times, and switching energy. My
question is: what are the most important factors to look at when selecting
a device? Obviously current and voltage ratings are very important but what
about keeping capacitance as low as possible, etc? Are there any good
documents out there the correlate these parameters to an fmax of the
device?
I did find a device that looks like it would be a good candidate: the
Microsemi APTGLQ200H120G. It is a full bridge power module. Anyone work
with this device or know if there any reasons not to use it? Thank you all
very much for the help!
Jeremy
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