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Re: Recent s.s.t.c work
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- Subject: Re: Recent s.s.t.c work
- From: "Tesla list" <tesla@xxxxxxxxxx>
- Date: Tue, 18 Oct 2005 15:15:21 -0600
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Original poster: "K. C. Herrick" <kchdlh@xxxxxxx>
Steve (& all)-
Yes, it's a little slow; and at 100 KHz "a little" is too much. I
measure about 1 us between the fall at one IGBT gate (crossing 0) and
the beginning of turn-on at its opposite. The way I have the drives
configured now, the gating transistor doesn't start to turn on at all
until the driving wave goes above the IGBT's source-voltage
level. I'm going to change that so that that turn-on starts as soon
as the driving wave begins to rise from the -25 or so. That will
give more drive to the gating transistor by the time the driving wave
gets above the source-ref. level, & hopefully not cause overlap.
All the drivers are working OK; all the same. And I have currently
only 1.1 ohms in series with the gates--& will try getting rid of
that once I improve the delay.
KCH
Tesla list wrote:
Original poster: Steve Ward
<mailto:steve.ward@xxxxxxxxx><steve.ward@xxxxxxxxx>
Ken, what is the impedance of your gate driver? I have never seen
waveforms that slow and with that peculiar rising edge. The falling
edge looks normal. Is your gate drive transistor (the one that
pulls positive) falling out of saturation perhaps??? The turn on is
usually faster than turn off...
The really odd thing is that your gate voltage slows down before you
even hit the 0V line!!! That is *not* right. Have you checked each
driver? Maybe this one driver is damaged and also causing your
imbalance in primary current from hafl-cycle to half-cycle?
Good luck... in any case, i think that those large turn on delays
are fix-able. My gate drivers can supply LOTS of current, as the
mosfets i use in it onl have a 55m ohm Rds. I dont use any
resistance on the IGBT gates, so i switch at the maximum speed possible.
Steve