Re: Spark Gap Replacements

• To: tesla-at-pupman-dot-com
• Subject: Re: Spark Gap Replacements
• From: Jim Fosse <jim.fosse-at-bdt-dot-com>
• Date: Fri, 03 Jan 1997 05:15:35 GMT
• Subscriber: jim.fosse-at-bdt-dot-com Thu Jan 2 23:18:47 1997

>Date: Wed, 01 Jan 1997 10:06:26 -0800
>From: Bert Hickman <bert.hickman-at-aquila-dot-com>
>To: tesla-at-pupman-dot-com
>Subject: Re: Spark Gap Replacements
>
[snipletto for chip, et. al.]
>
>Thanks for the update! This is an area I'd like to further explore when
>time permits, though probably with power MOSFETS or IGBT's instead of
>straight bipolars, for the same reason - investigating quenching. In
>your work, did you see any surprises, or did experiment seem to match
>theory? 
>
John and Bert,

	Don't forget that a reversed biased transistor ( Collector
Emitter reversal; not base reversal), unlike a tube (cathode emission
problem) or mosfet (reverse diode conduction on problem), exhibits a
gain of about 0.8! with a very low drop of (say) 20 millivolts.

( I'm not sure about IGBTs, but, I'd bet that they have a reverse
diode in their construction;(

	Regards,

	jim

abysmal sentence construction! I hope it's understandable in american
instead of the engineerese that it was written in;)

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